Ceramic Insulating Heat Dissipation Substrates (White Tile, Plain Substrates)

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Silicon nitride ceramics:
White tile (plain substrates)

Toshiba Materials' silicon nitride ceramic substrates are among the best in the world for heat dissipation and strength.
They are used in electronics fields such as power semiconductor modules, inverters and converters, replacing other insulating materials to increase production output and reduce size and weight.
Their extremely high strength also makes them a key material that increases the life and reliability of the products they are used in.

Silicon Nitride Ceramics: White Tile (Plain Substrates)

Features

  • Among the best in the world for heat dissipation and strength
  • Enables designs involving drilling and screwing or pressure welding, methods that are usually difficult

Comparison with other materials

Comparison with other materials : Silicon nitride ceramics
Material Alumina Alusil AlN Si3N4(SIN)
Al2O3 (ZDA,ZTA) [TAN-170-250] For electronic applications For structural applications
[TSN-90] [TSN-03]
Thermal conductivity
(W/(m K))
20-30 24 160-255 85-95 20
Bending strength
(MPa)
310-400 500-600 300-450 650 1000
Fracture toughness
(MPa-m1/2)
3-4 5-7 2-4 5-7 6-8
Linear expansion coefficient
(x10-6/K)
7.1-8.1 7-8 4.5-4.6 2.6 3.0
Dielectric strength
(kV/mm)
>12 >14 >14 >14 >14
Relative permittivity 9-10 12 8-9 7-9 7-9

Product specifications (Standard design)

Product specifications : Silicon nitride ceramics
Item Unit Aluminum nitride (AlN) Silicon nitride (SiN)
TAN-170 TAN-200 TAN-230 TAN-90
External dimensions mm Max. 160×160 φ210 Max. 160×160 Max. 100×100 Max. 170×130
Tolerance Standard: ± 0.2mm (laser cut) ± 0.15mm (laser cut)
Thickness mm 0.4-2.5 0.4-1.5 0.635 0.32/0.635
Tolerance Standard: ± 10% ±0 .02mm (polished) ±0.05mm
Warping mm 0.4% or less 0.4% or less (≤50mm)
Surface processing - Standard: Blasted, lapped, mirror polished, no surface processing Blasted

*The value of a table is not a guaranteed performance.

Examples of uses

  • Double-sided heat dissipation in power cards (power semiconductors) - power control units for automobiles
    Double-sided heat dissipation in power cards (power semiconductors) - power control units for automobiles
  • Power IGBT/MOSFET discrete packaging
    Power IGBT/MOSFET discrete packaging
  • Inverters
  • Converters
  • Batteries
  • Secondary cells
  • Automobile air conditioning
  • LEDs

Benefits for customers

  • Higher output
  • Smaller size
  • Lighter weight
  • Longer life
  • Greater reliability

Catalog download

Aluminum nitride ceramics:
White tile (plain substrates)

Our aluminum nitride ceramic substrates are among the world's best for heat dissipation. Our insulating heat dissipation substrates have thermal conductivities ranging from 160 to a maximum of 255W/(m K), making them ideal for areas requiring high heat dissipation or those requiring a somewhat thick substrate that can withstand high voltages.
They are also ideal for use as semiconductor substrates as they have a similar thermal expansion rate to silicon, silicon carbide, gallium nitride and gallium arsenide chips.

Aluminum Nitride Ceramics: White Tile (Plain Substrates)

Features

  • Extensive range with among the best heat dissipation in the world
  • We also have a range of substrates with thin metallized film.Link

Comparison with other materials

Comparison with other materials : Aluminum nitride ceramics
Material Alumina Alusil AlN Si3N4 (SIN)
Al2O3 (ZDA,ZTA) [TAN-170-250] For electronic applications For structural applications
[TSN-90] [TSN-03]
Thermal conductivity
(W/m・K)
20-30 24 160-255 85-95 20
Bending strength
(MPa)
310-400 500-600 300-450 650 1000
Fracture toughness
(MPa・m1/2)
3-4 5-7 2-4 5-7 6-8
Linear expansion coefficient
(×10-6/K)
7.1-8.1 7-8 4.5-4.6 2.6 3.0
Dielectric strength
(kV/mm)
>12 >14 >14 >14 >14
Relative permittivity 9-10 12 8-9 7-9 7-9

Product specifications (Standard design)

Product specifications : Aluminum nitride ceramics
Item Unit Aluminum nitride (AlN) Silicon nitride (SiN)
TAN-170 TAN-200 TAN-230 TAN-90
External dimensions mm Max. 160×160 φ210 Max. 160×160 Max. 100×100 Max. 170×130
Tolerance Standard: ± 0.2mm (laser cut) ± 0.15mm (laser cut)
Thickness mm 0.4-2.5 0.4-1.5 0.635 0.32/0.635
Tolerance Standard: ± 10% ±0 .02mm (polished) ±0.05mm
Warping mm 0.4% or less 0.4% or less (≤50mm)
Surface processing - Standard: Blasted, lapped, mirror polished, no surface processing Blasted

*The value of a table is not a guaranteed performance.

Examples of uses

  • Bases of thick film, thin film and microcircuit substrates
  • Resistance chips (chip resistors)

Benefits for customers

  • Higher output
  • Smaller size

Catalog download

If you have any inquiries, please contact us.

Open 9:00am-5:00pm (business days)

Contact Us

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