Aluminum nitride ceramics:
Our aluminum nitride ceramic substrate has high heat dissipation. Our insulating heat dissipation substrates have thermal conductivities ranging from 170 to 250W/(m K), making them ideal for areas requiring high heat dissipation or those requiring a somewhat thick substrate that can withstand high voltages.
They are also ideal for use as semiconductor substrates as they have a similar thermal expansion rate to silicon, silicon carbide, gallium nitride and gallium arsenide chips.
- A lineup with high heat dissipation and a wide variety of thermal conductivity
- We also have a range of substrates with thin metallized film.Link
|JIS_R1611 Laser flash method||160-255|
|JIS_C2141 7 Three point bending strength||300-450|
|JIS_R1607 IF(Indentation Fracture) method||2-4|
|Linear expansion coefficient
|Relative permittivity||JIS_C2141 16.||8-9|
Product specifications (Standard design)
|Item||Unit||Aluminum nitride (AlN)|
|External dimensional tolerance||mm||Standard: ± 0.2mm (laser cut)|
|Tolerance||Standard: ± 10% ±0 .02mm (polished)|
|Warping||mm||0.4% or less|
|Surface processing||-||Standard: Blasted, lapped, mirror polished, no surface processing|
*The value of a table is not a guaranteed performance.
*Please contact us for external dimensions and thickness.
Examples of uses
- Bases of thick film, thin film and microcircuit substrates
- Resistance chips (chip resistors)
Benefits for customers
- Higher output
- Smaller size