Ceramic Insulating Heat Dissipation Substrates (Plain Substrates)

If you have any inquiries, please contact us.

Tokyo+81-3-3457-4874

Open 9:00am-5:00pm (business days)

Aluminum nitride ceramics:
Plain substrates

Our aluminum nitride ceramic substrates are among the world's best for heat dissipation. Our insulating heat dissipation substrates have thermal conductivities ranging from 160 to a maximum of 255W/(m K), making them ideal for areas requiring high heat dissipation or those requiring a somewhat thick substrate that can withstand high voltages.
They are also ideal for use as semiconductor substrates as they have a similar thermal expansion rate to silicon, silicon carbide, gallium nitride and gallium arsenide chips.

Features

A lineup with high heat dissipation and a wide variety of thermal conductivity
We also have a range of substrates with thin metallized film.Link

Characteristic list

Characteristic list : Aluminum nitride ceramics
Material	Measuring method	AlN
Material	Measuring method	[TAN-170-250]
Thermal conductivity (W/m・K)	JIS_R1611 Laser flash method	160-255
Bending strength (MPa)	JIS_C2141 7 Three point bending strength	300-450
Fracture toughness (MPa・m^1/2)	JIS_R1607 IF(Indentation Fracture) method	2-4
Linear expansion coefficient (×10^-6/K)	JIS_C2141 10 Thermomechanical Analysis	4.5-4.6
Dielectric strength (kV/mm)	JIS_C2110-1 5.2.1.2	>14
Relative permittivity	JIS_C2141 16.	8-9

Product specifications (Standard design)

Product specifications : Aluminum nitride ceramics
Item	Unit	Aluminum nitride (AlN)
Item	Unit	TAN-170	TAN-200	TAN-230
Thermal conductivity	W/m・K	160～180	190～210	220～235
External dimensional tolerance	mm	Standard: ± 0.2mm (laser cut)
Thickness	mm	0.4～2.5	0.4～1.5	0.635
Thickness	Tolerance	Standard: ± 10% ±0 .02mm (polished)
Warping	mm	0.4% or less
Surface processing	-	Standard: Blasted, lapped, mirror polished, no surface processing