|
Product Information
|
Aluminum nitride (AlN) plain substrates
 |
Outline
Toshiba Materials offers AlN plain substrates, which have a dense, minute microstructure made by our material and sintering technology that took a long time to develop. We line up not only the high heat-dissipating AlN substrate series but also the high-strength silicon nitride (Si3N4) substrate series.
AlN plain substrates have a low thermal expansion coefficient similar to those of Si, GaN and GaAs semiconductors, which means that they are best fit for semiconductor mounting substrates. |
Advantages
AlN substrates:
- High heat conductivity
- High insulation & high withstanding voltage
- Low thermal expansion coefficient similar to those of Si, GaN and GaAs semiconductors
- Substitutes high heat-conductive but toxic berylia (BeO) substrates.
Silicon nitride (SiN) substrates:
- High strength, high reliability
- Low thermal expansion coefficient similar to those of Si, GaN and GaAs semiconductors
- High insulation & high withstanding voltage
FAQ
FAQ on Aluminum nitride fine ceramics
Page top
|
